Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 61: Poster II: Materials, Interfaces and Heterostructures

HL 61.43: Poster

Thursday, March 25, 2010, 18:00–20:00, Poster D1

Quantification of Impurities in Cu2O — •Andreas Laufer¹, Swen Graubner¹, Hauke Metelmann¹, Bruno Karl Meyer¹, Sebastian Geburt², and Carsten Ronning² — ¹I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany — ²Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany

Cuprous oxide (Cu₂O) is considered to be a promising material for thin film solar cell applications. P-type Cu₂O, for example, could be obtained by N-doping. The identification of impurities that could act as compensating donors is very important. Among the methods for impurity analysis, secondary ion mass spectrometry (SIMS) is very attractive due to the fact that the chemical identity of the elements can be determined directly, independent of factors such as the ionisation state or binding type. In addition, the sensitivities are very high enabling one to detect some elements in concentrations of as little as a few ppm. The quantification of SIMS data is possible using the method of relative sensitivity factors (RSF). Unfortunately, these factors vary for each host crystal and while there are RSF tables for Si and for compound semiconductors such as GaAs, InP or GaN, such a reference did not yet exist for Cu₂O. In the presented work, the RSF for a number of important elements have been determined using ion implanted standards, thus allowing one to quantify the impurity concentrations found. These factors have then been applied to sputtered Cu₂O thin films.