Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 62: Poster II: Photovoltaics and Organic Semiconductors
HL 62.31: Poster
Thursday, March 25, 2010, 18:00–20:00, Poster D2
Morphological studies of microcrystalline silicon for thin-film solar cells by raman spectroscopy and TEM — •Vitalij Schmidt1, Daniel Janzen2, Wiebke Hachmann1, Marc Sacher1, Stefan Gruss2, Helmut Stiebig2, and Ulrich Heinzmann1 — 1University of Bielefeld, 33615 Bielefeld — 2Malibu GmbH & Co. KG, 33609 Bielefeld
Thin-film amorphous and microcrystalline silicon are promising materials for photovoltaics as they have the potential to reduce the solar cell costs. In case of microcrystalline silicon the crystalline volume fraction is an important issue for the quality of solar cells as it is related to the microstructure of the material and the defect density.
Using an AKT PECVD system optimized for amorphous silicon layer deposition we deposited microcrystalline silicon diodes on 1300 mm × 1100 mm glas-TCO superstrates under variation of deposition time, RF power, silane concentration and distance of the electrodes.
Focusing on the crystalline fraction and especially its lateral homogenity over the 1,4 m2 area we analyzed the intrinsic layer by Raman spectroscopy on different positions. Two excitation wavelength (473 nm and 633 nm) are used in ordner to get depth dependent information of the crystallinity. TEM observations of cross-section of chosen samples confirmed the spectroscopy given results.
Based on the lateral information achieved the process was optimized and a correlation between crystalline volume fraction and local cell efficiency will be disussed.