Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 62: Poster II: Photovoltaics and Organic Semiconductors

HL 62.32: Poster

Thursday, March 25, 2010, 18:00–20:00, Poster D2

Estimation of excess carrier depth profile from spectral photoluminescence yield in c-Si absorbers — •Sebastian Knabe and Gottfried H. Bauer — Institure of Physics, University Oldenburg, Germany

The photoluminescence (PL) emitted from excited semiconductors provides access to parameters like the splitting of quasi-Fermi-levels, optical absorption, etc and is based on the recombination of excess carrier. In this study we show one strategy to estimate parameters like excess carrier lifetime, surface recombination velocity, etc. of the excess carrier density depth profile from photoluminescence measurements in the model system crystalline silicon. We simulate the spectral PL and fit these results to experimental ones with respect to an optimally selected carrier depth profile with a Nelder-Mead algorithm.