Regensburg 2010 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 62: Poster II: Photovoltaics and Organic Semiconductors

HL 62.5: Poster

Donnerstag, 25. März 2010, 18:00–20:00, Poster D2

Degradation of solution-processed pentacene field-effect transistors — •Teodor Toader, Claudia Bock, and Ulrich Kunze — Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum

In this work 13,6-N-Sulfinylacetamidopentacene (NSFAAP) [1] is used to study degradation of solution-processed bottom-contact pentacene transistors. We use conventional UV lithography and lift-off technique to structure Ti/Pd (1 nm/25 nm) electrodes on n-type oxidised silicon wafer. The pentacene thin films are deposited by spin-coating NSFAAP from a CHCl₃ solution (1 wt%) and thermally converting the precursor to pentacene in a nitrogen environment. After processing the samples are stored in a glovebox under nitrogen atmosphere and for comparison in ambient dark atmosphere at T = 21  ^∘C and 50 % humidity. From two-terminal current-voltage (I−V) measurements characteristic transistor parameters like the effective and field-effect mobility, the On/Off ratio and the threshold voltage are extracted with respect to the time after processing. Additionally the degradation of samples stored under envorinmental conditions and protected with PMMA is studied. The I−V measurements are correlated with scanning electron micrographs.

[1] Ali Afzali, et al., J. Am. Chem. Soc. 124 (30), 8812 -8813, (2002).