Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 62: Poster II: Photovoltaics and Organic Semiconductors
HL 62.5: Poster
Thursday, March 25, 2010, 18:00–20:00, Poster D2
Degradation of solution-processed pentacene field-effect transistors — •Teodor Toader, Claudia Bock, and Ulrich Kunze — Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum
In this work 13,6-N-Sulfinylacetamidopentacene (NSFAAP) [1] is used to study degradation of solution-processed bottom-contact pentacene transistors. We use conventional UV lithography and lift-off technique to structure Ti/Pd (1 nm/25 nm) electrodes on n-type oxidised silicon wafer. The pentacene thin films are deposited by spin-coating NSFAAP from a CHCl3 solution (1 wt%) and thermally converting the precursor to pentacene in a nitrogen environment. After processing the samples are stored in a glovebox under nitrogen atmosphere and for comparison in ambient dark atmosphere at T = 21 ∘C and 50 % humidity. From two-terminal current-voltage (I−V) measurements characteristic transistor parameters like the effective and field-effect mobility, the On/Off ratio and the threshold voltage are extracted with respect to the time after processing. Additionally the degradation of samples stored under envorinmental conditions and protected with PMMA is studied. The I−V measurements are correlated with scanning electron micrographs.
[1] Ali Afzali, et al., J. Am. Chem. Soc. 124 (30), 8812 -8813, (2002).