Regensburg 2010 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 63: III-V Semiconductors

HL 63.1: Vortrag

Freitag, 26. März 2010, 10:15–10:30, H13

Theoretical Description of optical properties in III-V Semiconductor Nanostructures — •Marc Landmann, Eva Rauls, and Wolf Gero Schmidt — Universität Paderborn

We present a density functional theory (DFT) study of the electronical and optical properties of GaAs and AlAs bulk and AlAs/GaAs superlattices. Thereby, we emphasize that the DFT calculation of band offsets already yields results in quantitative agreement with the experiment. For a general description of optical properties (e.g. band structure and optical absorption) we outline the limitations of a pure independent particle (DFT) description and contrast these results with data obtained from the many body pertubation theory based independent quasiparticle approximation (GWA) and Coulomb-correlated quasiparticle approximation (BSE). [1]

[1] W. G. Schmidt et al., PRB 67, 085307 (2003)