Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 64: Quantum Dots and Wires: Optical Properties VI

HL 64.7: Talk

Friday, March 26, 2010, 12:00–12:15, H14

Nuclear spin-polarization of InGaAs quantum dots due to electrical spin-injection — Pablo Asshoff, •Andreas Merz, Gunter Wüst, Heinz Kalt, and Michael Hetterich — Karlsruhe Institute of Technology (KIT) and DFG Center for Functional Nanostructures (CFN), 76131 Karlsruhe, Germany

For quantum information processing, the electronic spin states in semiconductor quantum dots can be used as two-level systems. Polarization of the nuclei resulting from spin-flip processes of the electrons is regarded to be detrimental to this. On the other hand, this interaction provides an easy access to the spin states of the nuclei. In this contribution, we demonstrate that electrical pumping of the quantum dots with spin-polarized electrons in a spin-injection light-emitting diode (spin-LED, [1]) can be used to achieve a nuclear spin polarization.

[1] M. Hetterich et al., in Advances in Solid State Physics, edited by R. Haug (Springer, Berlin, 2009), Vol. 48, p. 103