Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 65: GaN-based Devices
HL 65.7: Vortrag
Freitag, 26. März 2010, 12:00–12:15, H15
Quantum corrections to the Drude conductivity in AlxGa1−xN/GaN two-dimensional electron gas — •Stepan Shvarkov, Andreas Jupe, Dirk Reuter, and Andreas D. Wieck — Ruhr-Universität Bochum, Deutschland
The magnitotransport properties of Gd-implanted AlxGa1−xN/GaN heterostructures are studied. We observe an increase of the longitudinal resistance with decreasng temperature < 80 K. This is atributed to both electron-electron interactions and weak localization. The presence of Gd atoms in the sample makes Kondo effect also possible, but due to the fact that the behavior of the Kondo effect and weak localization with temperature and magnetic field change are very similar, further studies of these effects in AlxGa1−xN/GaN are necessary and currently under way.