Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 65: GaN-based Devices
HL 65.8: Talk
Friday, March 26, 2010, 12:15–12:30, H15
Long term investigations of neuronal cell cultures with AlGaN/GaN-based HEMTs — •H. Witte1, C. Warnke1, T. Voigt2, A. de Lima2, and A. Krost1 — 1Inst. of Experimental Physics, University of Magdeburg, Magdeburg — 2Inst. of Physiology, University of Magdeburg, Magdeburg
Planar devices based on metal layers or Si-devices are widely used for the detection of electrical activity of neuron cells. As an alternative more and more AlGaN/GaN- based devices are applied for analysis of biological molecules and single cells. Otherwise, the use of AlGaN/GaN based high electron transistors (HEMTs) as sensors for biological networks are seldom up to now. We have applied AlGaN/GaN HEMTs for monitoring the growth behavior of neurons from embryonic rat cerebral cortex form active networks after one week in vitro. Both, the source-drain current at 0.1 V bias as well as the frequency dependent impedance at zero voltage were measured within the time regime of culturing during some days. From these investigations we can distinguish the culture medium and the changes due to the growing neuron cell network. Results from long term investigations will be compared with phenomena of long term stimulation using a gold electrode / neuron network interface with respect to damaging processes by electrical fields. This knowledge is the basic for the detection of mechanism, e.g. of the energy metabolism.