 |
10:15 |
HL 65.1 |
Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes — •Wolfgang Scheibenzuber and Ulrich Schwarz
|
|
|
|
10:30 |
HL 65.2 |
Anisotropy in semipolar InGaN laser diodes: Consequences for resonator design and facet formation — •Jens Rass, Tim Wernicke, Wilfred John, Sven Einfeldt, Patrick Vogt, Markus Weyers, and Michael Kneissl
|
|
|
|
10:45 |
HL 65.3 |
GaN-based laser structure with semipolar InGaN QWs realized by selective area epitaxy — •Thomas Wunderer, Johannes Biskupek, Andrey Chuvilin, Ute Kaiser, Yakiv Men, Junjun Wang, Frank Lipski, Stephan Schwaiger, Kamran Forghani, and Ferdinand Scholz
|
|
|
|
11:00 |
HL 65.4 |
Heterostructure design optimisation of (In)AlGaN deep ultraviolet light emitting diodes — •T. Kolbe, T. Sembdner, A. Knauer, V. Küller, H. Rodriguez, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl
|
|
|
|
11:15 |
HL 65.5 |
GaN-based LEDs on 200 mm diameter substrates — Adam Boyd, Hannes Behmenburg, Olaf Rockenfeller, Bernd Schineller, and •Michael Heuken
|
|
|
| |
11:30 |
|
15 Min. Coffee Break
|
|
|
|
11:45 |
HL 65.6 |
Electrical and Optical Characteristics of GaN based MSM Photodetectors — •Martin Martens, Jessica Schlegel, Patrick Vogt, Frank Brunner, Richard Lossy, Joachim Würfl, Markus Weyers, and Michael Kneissl
|
|
|
|
12:00 |
HL 65.7 |
Quantum corrections to the Drude conductivity in AlxGa1−xN/GaN two-dimensional electron gas — •Stepan Shvarkov, Andreas Jupe, Dirk Reuter, and Andreas D. Wieck
|
|
|
|
12:15 |
HL 65.8 |
Long term investigations of neuronal cell cultures with AlGaN/GaN-based HEMTs — •H. Witte, C. Warnke, T. Voigt, A. de Lima, and A. Krost
|
|
|
|
12:30 |
HL 65.9 |
Recording glycolytic oscillations in yeast cells using AlGaN/GaN high electron mobility transistor (HEMT) — •Christian Warnke, Hartmut Witte, Thomas Mair, Marcus J. B. Hauser, and Alois Krost
|
|
|
