Regensburg 2010 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 66: ZnO-based Devices
HL 66.1: Vortrag
Freitag, 26. März 2010, 10:15–10:30, H17
Properties of transparent ZnO-based electronics — •Alexander Lajn, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig, Germany
In combination with transparent light emitters, transparent electronics permit the fabrication of fully transparent displays. Thus, new designs allowing higher information content, better ergonomics and new aesthetic aspects are feasible; e.g. in car wind shields, windows, monitors or cell phones. We report on the fabrication of transparent rectifying contacts (TRC) on ZnO thin films and their application in photodetectors, field-effect transistors and inverters. Our TRC can be described as Schottky-diodes and exhibit maximum effective barrier heights of 0.87 eV, ideality factors of 1.47 and rectification ratios of 5× 106. Visible-blind UV photodetectors with an external quantum efficiency of 32% at 375 nm and an UV-VIS rejection ratio in excess of 103 are demonstrated. Metal-semiconductor field-effect transistors (MESFET) with a channel mobility of 11.4 cm2/Vs and on/off-ratios of 106 were fabricated. An average transmission of 70 % in the visible spectral range was achieved for the AgxO-based gate electrodes. Furthermore the MESFETs operate at low voltages, only about Δ U=2.5 V are required to switch between on- and off-state. This advantage of MESFETs (compared to MISFETs) was successfully transferred to integrated inverters, yielding a maximum gain of 200 at a supply voltage of 4 V and a low uncertainty level of 0.3 V.