Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 66: ZnO-based Devices

HL 66.2: Talk

Friday, March 26, 2010, 10:30–10:45, H17

Properties of transparent ZnO inverters under the influence of light and elevated temperature — •Tobias Diez, Alexander Lajn, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, 04103 Leipzig

Transparent electronics is an ambitious technology, which can be applied in transparent displays, e.g., as car wind-shield displays, in cell phones and electronic paper. In order to be able to manufacture these devices, transparent wide band-gap semiconductors, such as ZnO, have to be used. We fabricate normally-on metal-semiconductor field-effect transistors (MESFET) with reactive dc-sputtered Schottky-gate contacts and combine these to transparent inverters. They exhibit a transparency of about 69 % averaged over the device area and the visible spectrum. To explore the application relevant performance we investigate the change of the electrical properties of our transparent ZnO inverters under illumination with visible light. The uncertainty level, indicating the range of the input voltage with a ambiguous logical output, remains constant at about 0.3 V. Also the peak gain value is mainly unaffected by the incident light, except for blue light, for which a reduction of the gain is observed. Furthermore we investigate the temperature dependence of the inverter characteristics.