HL 66: ZnO-based Devices
Freitag, 26. März 2010, 10:15–11:15, H17
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10:15 |
HL 66.1 |
Properties of transparent ZnO-based electronics — •Alexander Lajn, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann
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10:30 |
HL 66.2 |
Properties of transparent ZnO inverters under the influence of light and elevated temperature — •Tobias Diez, Alexander Lajn, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann
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10:45 |
HL 66.3 |
ZnO-based On-Chip Devices for Cell Potential Measurement — •F. Klüpfel, A. Lajn, H. Frenzel, H. von Wenckstern, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann
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11:00 |
HL 66.4 |
Appropriate choice of channel ratio in thin-film transistors for the exact determination of field-effect mobility — •Koshi Okamura, Donna Nikolova, Norman Mechau, and Horst Hahn
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