Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 68: II-VI Semiconductors: mainly Optical Properties

HL 68.5: Talk

Friday, March 26, 2010, 12:30–12:45, H17

Size-dependent recombination dynamics in ZnO nanowires — •Juan Sebastian Reparaz — Institut für Festkörperphysik - Technische Universität Berlin Hardenbergstr. 36, Sekr. EW 5-1, D-10623 Berlin, Germany

A deep understanding of the recombination dynamics of ZnO nanowires is a natural step for a precise design of on-demand nanostructures based on this material system. In this work we investigate the influence of finite-size on the recombination dynamics of the neutral bound exciton around 3.365 eV for ZnO nanowires with different diameters. We demonstrate that the lifetime of this excitonic transition decreases with increasing the surface-to-volume ratio due to a surface induced recombination process. Furthermore, we have observed two broad transitions around 3.341 and 3.314 eV, which were identified as surface states by studying the dependence of their life time and intensitiy with the NWs dimensions.