Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: SiC

HL 9.1: Talk

Monday, March 22, 2010, 11:30–11:45, H13

Temperature dependence of damage formation in Ag ion irradiated 4H-SiC — •Thomas Bierschenk¹, Elke Wendler¹, Werner Wesch¹, Johan Malherbe², and Erich Friedland² — ¹Institute of Solid State Physics, Friedrich Schiller University of Jena, Jena, Germany — ²Department of Physics, University of Pretoria, Pretoria, South Africa

Rutherford backscattering spectrometry in channelling mode was used to study the defect formation in Ag ion irradiated SiC. The 4H-SiC samples were irradiated with 360 keV Ag⁺ ions at different temperatures between 15 and 800 K over a wide range of fluences (10¹¹ … 2× 10¹⁶ cm⁻²). The results can be divided into two groups:

(i) For temperatures between 15 and 475 K the amorphisation of the implanted layer was reached. The over-all cross section of defect production at very low fluences, which comprises the formation of point defects and amorphous clusters, is almost identical in this temperature range. Differences in damage evolution occur for higher fluences and suggest that the relative contribution of amorphous clusters within a single ion impact decreases with rising temperature.

(ii) For implantation temperatures between 625 and 800 K no amorphisation was found even for the highest applied fluence. Due to the balance of production and recombination of point defects the defect concentration exhibits a distinctive plateau for medium ion fluences before increasing to saturation well below amorphisation. At this final stage our results indicate a mixture of point defect clusters and extended defects.