Regensburg 2010 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: SiC

HL 9.3: Talk

Monday, March 22, 2010, 12:00–12:15, H13

Electrical activation of B⁺-ions implanted into 4H-SiC — •Thanos Tsirimpis, Michael Krieger, Gerhard Pensl, and Heiko Weber — Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstrasse 7/A3, D-91058, Erlangen, Germany

Boron (B) acceptors reside on Si lattice sites in SiC and have an activation energy of ΔE(B)= 300 meV. In comparison to the heavier Al acceptors, implanted B⁺-ions cause less damage in SiC, however, care has to be taken during the required subsequent annealing step, because B atoms are a strong diffusing species in SiC. In order to suppress the transient-enhanced B diffusion, two possible solutions have been reported in the literature. (a) The leading and trailing edge of the implanted B profile is encircled by implanted Gaussian carbon profiles. (b) A two-step annealing process at 900^∘C and at an additional elevated temperature T_A is conducted. In this paper, both techniques are evaluated by means of resistivity and Hall-effect measurements, and the electrical activation of Boron is discussed.