HL 9: SiC
Monday, March 22, 2010, 11:30–12:45, H13
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11:30 |
HL 9.1 |
Temperature dependence of damage formation in Ag ion irradiated 4H-SiC — •Thomas Bierschenk, Elke Wendler, Werner Wesch, Johan Malherbe, and Erich Friedland
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11:45 |
HL 9.2 |
Analysis of the Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects — •Bernd Zippelius, Michael Krieger, Heiko B. Weber, Gerhard Pensl, Takamitsu Kawahara, and Hiroyuki Nagasawa
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12:00 |
HL 9.3 |
Electrical activation of B+-ions implanted into 4H-SiC — •Thanos Tsirimpis, Michael Krieger, Gerhard Pensl, and Heiko Weber
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12:15 |
HL 9.4 |
Apparently large ideality factors of MASS-diodes on the basis of the t-BN/SiC system — •Marc Brötzmann, Ulrich Vetter, and Hans Hofsäss
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12:30 |
HL 9.5 |
Electrical and Chemical Passivation of SiC Surfaces by Halogen Termination — •Sebastian Schoell, Marco Hoeb, Marianne Auernhammer, John Howgate, Martin S. Brandt, Martin Stutzmann, and Ian D. Sharp
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