Regensburg 2010 – wissenschaftliches Programm

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KR: Fachverband Kristallographie

KR 10: Poster: Multiferroics (with MA, DF, KR, DS)

KR 10.38: Poster

Dienstag, 23. März 2010, 10:45–13:45, Poster A

Annealing time and temperature dependence of structural, magnetic and transport properties of Co2MnSi-based MTJs — •Hendrik Wulfmeier, Markus Meinert, Daniel Ebke, Jan Schmalhorst, and Günter Reiss — Bielefeld University, Thin Films and Physics of Nanostructures, Department of Physics, Universitätsstr. 25, D-33615 Bielefeld, Germany

A high tunnel magnetoresistance effect (TMR) in magnetic tunnel junctions (MTJs) is the key for developing new spinelectronic devices like MRAM or magnetic sensors.

Optimization of MTJ-stacks where at least one electrode is built of a Heusler-alloy has been topic of many studies in recent time.

In order to enhance the level of crystallinity post-annealing is very successful. In general this effect is limited by interdiffusion processes at the interfaces of the individual layers. Crystallization and interdiffusion are both time- and temperature-dependent processes.

In our study we investigated not only the effect of different annealing temperatures but also the influence of different annealing times on the crystal structure and on the electronic properties. We prepared half (Co2MnSi | MgO) and full (Co2MnSi | MgO | CoFe | MnIr) MTJs on MgO[001]-substrates by sputter deposition and used x-ray diffractometry, MOKE and standard transport measurements for characterization.

The comparison of the experimental results (structural, magnetic and transport properties) will be discussed.