Regensburg 2010 – wissenschaftliches Programm

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KR: Fachverband Kristallographie

KR 2: Crystallography in nanoscience

KR 2.9: Vortrag

Dienstag, 23. März 2010, 12:15–12:30, H9

Electric Field Induced Structural Modifications in Metal/SrTiO₃ Junctions and their Resistive Properties — •Hartmut Stöcker^1,2, Juliane Seibt², Florian Hanzig², Susi Wintz², Matthias Zschornak¹, and Dirk C. Meyer² — ¹TU Dresden, Institut für Strukturphysik, Zellescher Weg 16, 01062 Dresden — ²TU Bergakademie Freiberg, Institut für Experimentelle Physik, Leipziger Straße 23, 09599 Freiberg

In oxides with perovskite-type of structure, mobile oxygen can cause the formation of non-stoichiometric regions when an electric field of sufficient strength (∼1000 V/mm) is applied. Our in-situ investigations of metal/SrTiO₃ junctions revealed reversible structural changes at room temperature caused by a systematic field-induced redistribution of oxygen. The investigations were carried out using wide-angle X-ray scattering, X-ray absorption spectroscopy, photoluminescence, nanoindentation and time-dependent electric I-U measurements.

Motivated by the successful use of SrTiO₃ with different doping metals for memory cells on the basis of resistive switching combined with the findings on the major importance of oxygen vacancy redistribution, we want to show the possibility of realizing a resistance change memory based on vacancy-doped SrTiO₃. The formation of corresponding metal/SrTiO₃ junctions in an electric field will be discussed as well as the switching between ohmic and Schottky-type resistive properties. A notable hysteresis in the I-U characteristics can be used to carry out Write, Read and Erase operations to test the memory cell properties of such junctions.