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MA: Fachverband Magnetismus
MA 10: Poster I
MA 10.73: Poster
Tuesday, March 23, 2010, 10:45–13:45, Poster A
Magnetoresistrance of thin film microstructures of the Heusler compounds Cu2MnAl and Co2MnSi — •Mohamed Obaida1,2, Denise Erb2, Kurt Westerholt2, and Hartmut Zabel2 — 1Institut für Experimentalphysik 4,Ruhr-Universität Bochum,44780 Bochum — 2National Research Center, Tahrir Street-Dokki., 12311 Cairo., Egypt.
We study the magnetoresistance of thin films of the ferromagnetic Heusler compounds Cu2MnAl and Co2MnSi. The Heusler thin films are prepared by UHV magnetron sputtering and shaped into rectangular bars with a width between 1 µm and 50 µm by optical lithography. The magnetoresistance is measured in magnetic fields up to 4 T and for the orientation of the field parallel and perpendicular to the in-plane current. In the as-prepared state the Heusler alloy films are non-ferromagnetic and exhibit a very small magnetoresisitance only. The magnetoresistance strongly increases when the ferromagnetism gradually develops after step by step thermal annealing at high temperatures and decreases again when the magnetic moment approaches its maximum value. The magnetoresistance is dominated by an isotropic spin disorder contribution; only in the state with the maximum magnetic moment an additional small anisotropic magnetoresistance (AMR) can be resolved.
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