Regensburg 2010 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 15: Magnetic Half-metals and Oxides I

MA 15.10: Vortrag

Mittwoch, 24. März 2010, 12:30–12:45, H22

Growth and Characterisation of Mn stabilized Zirconia — •Jan Zippel, Michael Lorenz, Anette Setzer, Jörg Lenzner, Holger Hochmuth, Pablo Esquinazi, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnétr. 5, 04103 Leipzig, Germany

The possibility to combine both, the electron spin as a new degree of freedom and the electron charge offers opportunities for a new generation of devices. As recently predicted [1], Mn stabilized Zirconia is proposed as a ferromagnetic semiconductor with a Curie temperature Tc above room temperature. Here we present the growth of manganese doped ZrO2 with Pulsed-Laser deposition (PLD). By introducing more than 15 at% Mn, we observe only a tetragonal or cubic crystalline structure by doing X-ray diffraction (XRD). Transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy, Rutherford backscattering spectroscopy (RBS) and X-ray Photoelectron Spectroscopy (XPS) were done to check the structural properties as well as the Mn content and the stoichiometry. Beside the structural also the electronic and magnetic properties were investigated. We compare the conductivity of pure ZrO2 either with Mn doped ZrO2 or with Mn stabilized Zirconia (MnSZ) co-doped with Al, Y, and Nb. Superconducting quantum interference device (SQUID) measurements revealing a superparamagnetic behavior at low temperatures (T = 5K) but, up to now, no room temperature ferromagnetism.

[1] S. Ostanin et al., Phys. Rev. Lett 98, 0161011 (2007).