Regensburg 2010 – scientific programme
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MA: Fachverband Magnetismus
MA 3: Multiferroics I (with DF, KR, DS)
MA 3.4: Talk
Monday, March 22, 2010, 11:15–11:30, H3
Towards ferroelectric tunneling barriers with magnetic electrodes — •Daniel Pantel, Dietrich Hesse, and Marin Alexe — Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle
The tunneling magnetoresistance (TMR) is a well-established quantum phenomenon in oxide electronics [1]. Recently, tunneling electroresistance was experimentally investigated in an oxide ferroelectric tunneling barrier [2, 3]. Combining both functionalities in one device, i.e. a ferroelectric barrier sandwiched in between two ferromagnetic electrodes, yields interesting properties, e.g. different effects of the ferroelectric polarization on the two spin channels [4]. However, experimental results are still lacking.
In this talk we report on the growth and the properties of perovskite oxide heterostructures consisting of a pulsed laser deposition-grown thin ferroelectric barrier layer sandwiched between two magnetic electrodes. First electrical measurements on capacitor-like tunneling junctions are presented.
[1] De Teresa, J.M., et al., Science 286, 507 (1999)
[2] Contreras, J.R., et al., Appl. Phys. Lett. 83, 4595 (2003)
[3] Garcia, V., et al., Nature 460, 81 (2009)
[4] Velev, J.P., et al., J. Appl. Phys. 103, 07A701 (2008)
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