Regensburg 2010 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 33: Poster II
MA 33.13: Poster
Freitag, 26. März 2010, 11:00–14:00, Poster B1
Ni2MnIn Heusler electrodes for spin valves — •Hauke Lehmann1, Jeannette Wulfhorst1, Andreas Vogel1, Jan M. Scholtyssek1,2, Guido Meier1, and Ulrich Merkt1 — 1Institut für Angewandte Physik, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg — 2Institut für Elektrische Messtechnik und Grundlagen der Elektrotechnik, Technische Universität Braunschweig, Hans-Sommer- Str. 66, 38106 Braunschweig
Injection, manipulation, and detection of spin-polarized currents are fundamental issues in spintronics. We study the spin-dependent transport in lateral spin-valves [1, 2]. Nanopatterned, halfmetallic Ni2MnIn Heusler electrodes are prepared by electron-beam lithography and lift-off processing. Post-growth annealing is utilized to achieve the ordered L21 crystal structure. Thin films grown on Si3N4 membranes are investigated in situ in a transmission-electron microscope using electron diffraction [3]. The local spin-valve effect is measured with a copper channel between the two Heusler electrodes. Transport measurements are performed at low temperatures around 2 K in external magnetic fields of up to ± 5 T. In further experiments we aim at the detection of the extrinsic spin-Hall effect which has attracted significant interest. All-electrically detection in spin valves is possible by two additional leads on the sides of the copper channel [4].
[1] A. Vogel et al., Appl. Phys. Lett. 94, 122510 (2009)
[2] A. van Staa et al., Phys. Rev. B 77, 214416 (2008)
[3] J. M. Scholtyssek et al., J. Crystal Growth 311, 79 (2008)
[4] S. O. Valenzuela and M. Tinkham, Nature 442, 176 (2006)