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MA: Fachverband Magnetismus

MA 33: Poster II

MA 33.3: Poster

Freitag, 26. März 2010, 11:00–14:00, Poster B1

Low-voltage gating of ferromagnetic GaMnAs structure — Sam Owen^1,2, Joerg Wunderlich^1,3, Andrew Irvine², Zbynek Soban³, Kamil Olejnik^1,3, Tomas Jungwirth³, and •Vit Novak³ — ¹Hitachi Cambridge Laboratory, Cambridge, UK — ²Microelectronic Research Centre, Cavendish Laboratory, University of Cambridge, UK — ³Institute of Physics ASCR, Praha, Czech Republic

We report on low-voltage control of magnetic properties of a p-n junction field effect transistor via depletion effect in the ferromagnetic semiconductor channel. We show variable Curie temperature and anisotropic magnetoresistance, and demonstrate magnetization switchings induced by short electrical pulses of a few volts. The gatable ferromagnetic device is realized in an all-semiconductor epitaxial structure and offers a pricipally faster operation than the metal-oxide-semiconductor structures reported so far.