Regensburg 2010 – scientific programme

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MA: Fachverband Magnetismus

MA 33: Poster II

MA 33.56: Poster

Friday, March 26, 2010, 11:00–14:00, Poster B1

Magnetic anisotropy of (Ga,Mn)As epitaxial layers on GaAs — •Sergiy Mankovsky, Svitlana Polesya, and Hubert Ebert — Dept. Chemie und Biochemie/Phys. Chemie, Universität München, Butenandtstr. 11, D-81377 München, Germany

A study of the magnetic anisotropy of (Ga,Mn)As film deposited on GaAs substrate have been performed using the fully-relativistic spin-polarised KKR Green’s function method. Experimentally observed in-plane magnetic anisotropy exhibiting two-fold and four-fold symmetry at different temperatures is attributed particularly to the effects of lattice relaxation caused by the mismatch of GaAs and (Ga,Mn)As lattice parameters. In present work we have investigated the effect of tetragonal distortion in (Ga,Mn)As and the role of the (Ga,Mn)As/GaAs interface for the magnetic anisotropy as a function of the Mn concentration. Preliminary results suggest that the anisotropic exchange interaction contribute to the magnetic anisotropy as well in an appreciable way.