Regensburg 2010 – scientific programme

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MA: Fachverband Magnetismus

MA 33: Poster II

MA 33.5: Poster

Friday, March 26, 2010, 11:00–14:00, Poster B1

Cross-sectional STM investigations of manganese diffusion in GaAs based heterostructures — •Gerhard Münnich, Martin Utz, Dieter Schuh, and Jascha Repp — Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany

GaMnAs is a ferromagnetic semiconductor that has recently attracted a lot of scientific interest [1]. One possible application of GaMnAs may be using it for spin-injection into GaAs-based functional heterostructures. Recent studies addressed the influence of a non-equilibrium (T ≈ 250^∘C) grown GaMnAs layer on the performance of such heterostructures below.

These investigations showed that photoluminescence was quenched as a result of the GaMnAs layer, even though the GaMnAs layer was 10nm away from the optically active layer. This was attributed to possible back-diffusion of manganese into adjacent layers [2].

We addressed this issue in real space by using cross-sectional STM. As a first result of our work, we can give an upper boundary of the Mn content to diffuse into the GaAs.

[1] Sanghoon Lee et. al., Mater. Today 12, 14 (2009)

[2] R. Schulz et. al., Physica E 40, 2163 (2008)