Regensburg 2010 – scientific programme
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MA: Fachverband Magnetismus
MA 6: Magnetic Thin Films I (Heusler Alloys)
MA 6.1: Invited Talk
Monday, March 22, 2010, 14:00–14:30, H10
Heusler alloy films for spintronics — •Terunobu Miyazaki1, Daisuke Watanabe1, Shigemi Mizukami1, Feng Wu1, Takahide Kubota2, Sumito Tsunegi2, Hiroshi Nagahama2, Mikihiko Oogane2, and Yasuo Ando2 — 1WPI Advanced Institute for Materials Research Tohoku Univ. Sendai Japan — 2Department of Applied Physics Tohoku Univ. Sendai Japan
Half-metallic ferromagnets are an ideal material for obtaining high tunnel magnetoresistance (TMR) ratio because they have an energy gap at the Fermi level only in the up or down spin channel. Especially, Heusler alloys show a high Curie temperature and relatively high value of saturation magnetization and they are expected as an ideal material for spintronics. However, the realization of high TMR ratio and high spin polarization experimentally shown is in recent years. In my talk, first historical study of Heusler electrode tunnel junction including our past data will be explained. Then, transport properties of Co2FexMn1-xSi/Al-O/Co75Fe25 tunnel junctions and Gilbert damping constant in Co2FexMn1-xSi films for x of 0-1.0 will be explained in detail. Finally, I will explain an experiment for epitaxial Mn2.5Ga films, which are tetragonal (non-cubic Heusler type alloy) and exhibit perpendicular magnetic anisotropy of the order 107 erg/cc and low saturation magnetization about 250 Gauss. One can expect for the MnGa film as one candidate for the electrode material of MTJ of Spin-RAM. A quite recent experiments related to memory materials will be also included.