Regensburg 2010 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 6: Magnetic Thin Films I (Heusler Alloys)
MA 6.9: Vortrag
Montag, 22. März 2010, 16:30–16:45, H10
X-ray diffraction studies of Co2MnSi and Co2FeAl Heusler compounds in magnetic tunnel junctions — •Patrick Thomas, Daniel Ebke, Markus Schäfers, Oliver Schebaum, Andreas Hütten, and Andy Thomas — Thin Films and Physics of Nanostructures, Physics Department, Bielefeld University, Germany
Recently, we have shown high room temperature tunnel magnetoresistance values of about 150% for magnetic tunnel junctions containing the Heusler compound Co2FeAl.
In this work, we will present the structural properties of the Co2FeAl electrode that were determined by x-ray diffraction (XRD) as a function of annealing temperature. A B2 type structure can be achieved for all annealing temperatures. This is compared to (XRD) studies of similar layer stacks based on the Heusler compound Co2MnSi.
It will be discussed if a Co2FeAl buffer layer underneath another Heusler compound, e.g. Co2MnSi can induce a lower crystallization temperature as it was previously reported for Co2FeSi/Co2MnSi multi-layers.