Regensburg 2010 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 26: Poster Session

MM 26.41: Poster

Dienstag, 23. März 2010, 14:45–16:30, Poster C

Crystallization and Phase Separation of Si_1−xC_x (x = 0.33) Films — •Kai Volgmann¹, Wolfgang Gruber², Harald Schmidt^2,3, Wolfgang Maus-Friedrichs^1,3, Udo Geckle⁴, and Michael Bruns⁴ — ¹Institut für Energieforschung und Physikalische Technologien, TU Clausthal, D-38678 Clausthal-Zellerfeld — ²Institut für Metallurgie, AG Materialphysik, TU Clausthal, D-38678 Clausthal-Zellerfeld — ³Clausthaler Zentrum für Materialtechnik, TU Clausthal, D-38678 Clausthal-Zellerfeld — ⁴Institut für Materialforschung III, Forschungszentrum Karlsruhe GmbH, D-76344 Eggenstein-Leopoldshafen

Microstuctural changes during annealing of amorphous silicon carbide with varying silicon to carbon ratios are of considerable interest for tailoring of material properties in view of technical applications. We investigated phase separation and crystallization behaviour of magnetron sputtered amorphous Si_1−xC_x films (x = 0.33) with a thickness of 1.4 µm deposited on Si substrates using XPS, GI-XRD and SIMS. For as deposited samples XPS confirm a Si/C ratio of 2:1. After annealing at 700 ^∘C for 30 min the samples are still amorphous but XPS reveal a Si/C ratio of 1.33. The information depth of XPS is about 10 nm. During isothermal annealing at higher temperatures between 1200 and 1350 ^∘C GI-XRD shows first the simultaneous formation of crystalline Si and nanocrystalline SiC. Further annealing leads to a continuous decrease and complete vanishing of crystalline Si, while the amount of SiC increases until fully crystallization. The temperature dependence and possible explanations of this effect are discussed.