Regensburg 2010 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 26: Poster Session
MM 26.65: Poster
Dienstag, 23. März 2010, 14:45–16:30, Poster C
Structural characterization of AgGaSe2 thin films grown by Chemical Close Spaced Vapor Transport (CCSVT) — •Christoph Merschjann1, Barys Korzun1,2, Susan Schorr3, Thomas Schedel-Niedrig1, and Martha Christina Lux-Steiner1 — 1Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany — 2Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus — 3Free University Berlin, Institute of Geological Sciences, Berlin, Germany
Thin films (d ≈ 3 µm) of n-type AgGaSe2 thin films were successfully grown on glass and glass/molybdenum substrates using the technique of Chemical Close Spaced Vapor Transport (CCSVT). The structural characterization of the thin films was carried out by grazing incidence X-ray diffraction (GIXRD). The observed Bragg peaks belong exclusively to the chalcopyrite type structure. The lattice parameters and the atomic position of the anions were determined by Rietveld analysis of the GIXRD data. The structural refinement revealed also, that in the thin film only one phase, chalcopyrite type AgGaSe2, is present.
The results are compared to those published for single crystalline AgGaSe2. A comparative discussion of structural properties of chalcopyrite type compounds with different monovalent cations (Ag+ vs. Cu+) will round the presentation.