Regensburg 2010 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 26: Poster Session

MM 26.73: Poster

Dienstag, 23. März 2010, 14:45–16:30, Poster C

Growth of para-hexaphenyl (6P) on silicon oxide by hot wall epitaxy — •Markus Kratzer, Quan Shen, and Christian Teichert — Institute of Physics, University of Leoben, 8700 Leoben, Austria

In the present study, the growth of thin para-hexaphenyl (6P) films on silicon oxide has been investigated. The 6P layers were fabricated by hot wall epitaxy (HWE) at substrate temperatures between room temperature and 490 K. As substrate, a Si(100) wafer covered with native oxide was used. Conventional tapping mode atomic force microscopy (TM-AFM) revealed islands of upright standing 6P molecules in the sub-monolayer regime. Domains of different molecular orientation could be distinguished by transverse shear force microscopy (TSM). The influence of the growth conditions on the domain size and the influence of the domain orientation on the growth of the successive layers have been evaluated. HWE turned out to be an excellent method to grow an almost closed single 6P layer with large domain sizes. Support by the Austrian Science Fund FWF is acknowledged.