Regensburg 2010 – scientific programme

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MM: Fachverband Metall- und Materialphysik

MM 26: Poster Session

MM 26.81: Poster

Tuesday, March 23, 2010, 14:45–16:30, Poster C

Numerical studies on grain growth of Si: Influence of surface energy anisotropy — •Giordano Cantù and Wolfram Miller — Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, 12489 Berlin

With the developing market for multi-crystalline Si dedicated for photovoltaic applications the interest in understanding the details of the grain growth has increased. First numerical simulations on grain growth of Si have been performed by I. Steinbach [1] and detailed experimental investigations have been performed in the group of K. Nakajima (e.g. [2]). Corresponding (2D) calculations to one of the experiments have been performed by Chen et al. using a four-fold anisotropy with an anisotropy of 25% [3]. We have performed 2D computations of grain growth into an undercooled using the phase-field model of Warren et al. [4] and different approaches for the anisotropy of the surface energy. The influence of the dependence of the surface stiffness as a function of the crystal orientation on the growth kinetics is discussed.
  [1] I. Steinbach, Ein Multi-Phasen-Feld Model für facettiertes Kristalwachstum, PhD thesis, Würzburg 2000
  [2] Kozo Fujiwara, Yoshikazu Obinata, Toru Ujihara, Noritaka Usami, Gen Sazaki and Kazuo Nakajima, J. Crystal Growth 266 (2004), 441
  [3] P. Chen, Y. L. Tsai and C. W. Lan, Acta Mater. 56 (2008), 4114
  [4] J. A. Warren, R. Kobayashi, A. E. Lobkovsky, W. C. Carter, Acta Mater 51 (2003), 6035