Regensburg 2010 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 30: Topical Session Photovoltaic Materials I
MM 30.2: Vortrag
Mittwoch, 24. März 2010, 10:45–11:00, H4
Amorphous / crystalline silicon heterojunctions: Changes of structural and electronic properties upon low-temperature annealing — •Hannes Ner Beushausen, Tim Ferdinand Schulze, and Lars Korte — Silicon Photovoltaics, Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany
Solar cells based on amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions have gained much attention due to their high conversion efficiency. In order to increase the open circuit voltage Voc of these solar cells, the prime objective is to ‘passivate’ the a-Si:H/c-Si interface, i.e. to suppress interface recombination of photogenerated charge carriers by saturating recombination-active dangling bonds.
Commonly, thin (3-10nm) undoped, nominally intrinsic (i)a-Si:H interlayers are used to acheive this passivation effect. The presented work discusses the structural and electronic changes induced by low temperature post-deposition annealing of such (i)a-Si:H/c-Si structures.
The microscopic configuration of hydrogen in the thin amorphous layers, as probed by Fourier transform infrared spectroscopy (FTIRS), is linked to the improvement of the passivation and a dramatic increase of effective minority carrier lifetime τeff. With 10 nm thick undoped a-Si:H layers values up to τeff > 4.5 ms, corresponding to interface recombination velocities S as low as 2 cm/s, were observed.
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