Regensburg 2010 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 37: Mechanical Properties II
MM 37.3: Talk
Wednesday, March 24, 2010, 15:15–15:30, H16
Creep with Single Dislocation Resolution — •Philip Egberts1,2 and Roland Bennewitz1,2 — 1INM-Leibniz Institut für Neue Materialien, Campus D2 2, 66111 Saarbrücken, Germany — 2Department of Physics, McGill University, 3600 rue University, Montreal, Quebec, H3A 2T8, Canada
Creep in materials is a result of four contributing factors: dislocation glide, dislocation creep, diffusion processes, and grain boundary climbing. Atomic Force Microscopy (AFM) is able to deform materials and detect dislocation nucleation on the atomic scale. The application of AFM to the study of creep highlights one single factor, dislocation glide. The sharp tip of an AFM probe, having a tip radius of <10 nm, was used to both image and indent KBr(100) surfaces in ultrahigh vacuum. The small tip radius and high resolution capabilities of AFM allowed for the probing of a dislocation and defect free volume while allowing for the application of stresses in the GPa range with the application of nanoNewton forces. Rapid measurements of the cantilever deflection during creep studies allow for discrete atomic pop-in events to be observed as a function of holding time. Dislocation generation for up to four minutes after reaching the maximum load is observed.