Regensburg 2010 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

MM: Fachverband Metall- und Materialphysik

MM 39: Topical Session Photovoltaic Materials III

MM 39.1: Vortrag

Mittwoch, 24. März 2010, 14:45–15:00, H4

Influence of interface preparation on minority carrier lifetime for low bandgap tandem solar cell materials — •Nadine Szabó, B. Erol Sagol, Ulf Seidel, Klaus Schwarzburg, and Thomas Hannappel — Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Hahn-Meitner-Platz 1 14109 Berlin

III-V semiconductor compounds grown by MOVPE are implemented in todays state-of-the-art third generation multi-junction solar cells. The current record multi junction solar cell grown on germanium, having Ge, Ga(In)As and GaInP as subcells, reached a record efficiency of 41.6%. The efficiency of these multi junction solar cells could be significantly increased, if its low bandgap Ge subcell would be replaced by a more efficient tandem. For this purpose the low bandgap materials InGaAs and InGaAsP are suitable. The bandgap composition of these materials allows a better yield of the solar spectrum. Based on InGaAs/InGaAsP absorber materials we have developed a low bandgap tandem solar cell with optimized bandgaps. Results of time resolved photoluminescence (TRPL) for the IR-bandgap compounds InGaAsP (1.03 eV) / InGaAs (0.73 eV) will be presented. The lifetime of minority carriers is one of the most important properties of solar cell absorber materials. We show on the example of the low band gap tandem cell how the choice of the materials, the quality of the bulk, the optimization of the band gap energies and the preparation of the critical interfaces are essential to build a high efficiency solar cell. The quality of the bulk and the preparation of the critical interfaces are essential for the growth of the double hetero structure (DHS).