Regensburg 2010 – scientific programme

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MM: Fachverband Metall- und Materialphysik

MM 40: Topical Session Growth Kinetics I

MM 40.3: Talk

Wednesday, March 24, 2010, 16:45–17:00, H4

Controlled Growth of Ternary Systems due to Plasma Enhanced Chemical Vapor Deposition (PECVD) Using Metalorganic Precursors — •Markus Neubert and Volker Buck — Department of Technical Physics, University of Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg, Germany

Depending on the stoichimetric ratios the physical and chemical properties of ternary systems can vary considerably. These ratios can be adjusted by parameters of the deposition process.

Ternary systems of Ti_xSiC_y were deposited in a substrat temperature range from 400^∘C up to 800^∘C using a constant flux of two metalorganic precursors and different plasma powers. Analys of films was performed by Energy Dispersiv X-Ray Spectroscopy (EDX), Secondary Ion Mass Spectrometry (SIMS)and X-Ray Diffraction (XRD) with respect to stoichiometric ratios and structure of the films. Depending on both parameters variation of the stoichiometric ratio is possible. On a limited scale simutaneous modification of plasma power and substrat temperature can compensate each other.