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MM: Fachverband Metall- und Materialphysik
MM 42: Topical Session Multifunctional Materials III
MM 42.4: Vortrag
Mittwoch, 24. März 2010, 16:00–16:15, H6
Crossing an interface: Tuneable spin polarisation by means of electric charge — Mike Hambe1, Adrian Petraru2, Nikolay A. Pertsev3, Valanoor Nagarajan1, and •Hermann Kohlstedt2 — 1School of Materials Science & Engineering, University of New South Wales Sydney NSW 2052, Australia — 2Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, D-24143 Kiel, Germany — 3A. F. Ioffe Physico-Technical Institute, Russian Academy of Science, 194021, St. Petersburg, Russia
We present experimental results on entirely complex oxide La0.67Sr0.33MnO3/BiFeO3/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric-ferromagnetic tunnel junctions. The junctions were deposited by Pulsed Laser Deposition in a layer-by-layer growth mode and patterned by standard thin-film processing. We show that our devices posses a traditional Tunneling Magneto Resistance (TMR) ratio ~80% below 100 K, but that by inducing ferroelectric switching via an applied electric field of about 770 kV/cm, we can modulate the anti-parallel state resistance state as well as the TMR ratio. The experiments indicate a possible tuneable orbital reconstruction at ferromagnetic-ferroelectric interfaces via the remnant charge of the ferroelectric. The results will be discussed in the framework of the predicted magnetoelectric interface effect and may lead to novel multistate memory devices.