Regensburg 2010 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 47: Topical Session Growth Kinetics III
MM 47.3: Vortrag
Donnerstag, 25. März 2010, 11:00–11:15, H4
Organic semiconductor growth on Graphene studied by LEEM and µLEED — •Gregor Hlawacek1,2, Fawad S. Khokhar2, Raoul van Gastel2, Bene Poelsema2, and Christian Teichert1 — 1Institute of Physics, University of Leoben, 8700 Leoben, Austria — 2MESA+ Institute for Nanotechnology, University of Twente, NL-7500AE, Enschede, The Netherlands
The organic semiconductor para-sexiphenyl (6P) was deposited at various substrate temperatures onto graphene flakes grown on Iridium (111). The dynamics of the deposition process and the crystallographic structure were observed in-situ by means of Low Energy Electron Microscopy (LEEM) and micro Low Energy Electron Diffraction (µLEED). Layer-by-layer growth of lying molecules on graphene is observed for low deposition temperatures. After formation of a low-density layer, the full first monolayer already shows a bulk like structure. An exceptionally high mobility for 6P on graphene is observed in the initial low density layer. For room temperature the growth mode changes to Stranski-Krastanov for 6P on graphene. At elevated temperatures a continuous layer of upright standing molecules on the Ir(111) surface is nucleated by the presence of the graphene flakes.
This work is supported by the FWF project S9707-N08, STW and FOM project 04PR2318.