Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
MM: Fachverband Metall- und Materialphysik
MM 48: Topical Session Growth Kinetics IV
MM 48.4: Vortrag
Donnerstag, 25. März 2010, 12:45–13:00, H4
In Situ Observation of Dislocation Dynamics at the TOPO-TOMO Beamline at the Synchrotron Light Source ANKA — •Andreas Danilewsky1, Jochen Wittge1, Arne Cröll1, Adam Hess1, David Allen2, Patrik McNally2, Patrick Vagovic3, Zhijuan Li3, Tilo Baumbach3, Eider GorosteguiColinas4, Jorge Garagorri4, Reyes Elizalde4, Matteo Fossati5, Keith Bowen5, and Brian Tanner5 — 1Kristallographie, Universität Freiburg — 2RINCE, Dublin City University, Ireland — 3ANKA, ISS, Research Center Karlsruhe — 4CIT, Sab Sebastian, Spain — 5Physics Dept., Durham, UK
White beam X-ray topography at the Topo-Tomo beamline of the synchrotron light source ANKA (Research Centre Karlsruhe) is used to monitor in situ the origin and the dynamics of dislocations in silicon at high temperatures. The (100) Si sample with well defined, artificial defects from a nanoindenter was heated in a mirror heater up to 1000°C. During the heating the transmission X-ray topographs were taken with a CCD-camera system continuously every second resulting in a movie of the formation and motion of dislocations. It will be shown, that the indents act as the source for dislocation loops. The dislocations move with about 3.4 x 10-5 m/sec inside two opposite inclined {111} glide planes. Finally slip bands of 60°-dislocations are formed. The experimental details of the high temperature topography, the analysis of dislocations as well as the first results of the dislocation dynamics and slip band formation will be presented.