Regensburg 2010 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
O: Fachverband Oberflächenphysik
O 15: Spin-Orbit Interaction at Surfaces II
O 15.7: Talk
Monday, March 22, 2010, 16:30–16:45, H38
Evolution of Topological Edge-States in Bi1−xSbx Films on Si(111) — •Hadj Mohamed Benia, Carola Straßer, Klaus Kern, and Christian R. Ast — Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany
Due to a semimetal-semiconductor transition in the Bi1−xSbx alloy, Bi is transformed into a topological insulator for Sb concentrations larger than 8% [1]. So far, the evolution of the topological states with Sb concentration has only been studied theoretically [2]. We have experimentally investigated the band structure of high quality Bi1−xSbx films grown on Si(111) using angular resolved photoemission spectroscopy (ARPES). The evolution of the topological states as function of Sb concentration will be discussed.
[1] D. Hsieh et al. Nature 452, 970 (2008).
[2] L. Fu, C.L. Kane, Phys. Rev. B 76, 45302 (2007).