Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 2: Metal substrates: Solid-liquid interfaces

O 2.4: Vortrag

Montag, 22. März 2010, 12:00–12:15, H31

Formation of Ultrathin Copper Sulfide Semiconductor Films under Electrochemical Conditions — •Christian Schlaup and Klaus Wandelt — Institute for Physical and Theoretical Chemistry, Wegelerstr. 12, D-53115 Bonn, Germany

Ultrathin copper sulfide semiconductor films were prepared in an electrochemical environment using subsequential steps of copper deposition on an inert Au(1 0 0) electrode surface and reaction with bisulfide anions. The thickness of thus prepared copper sulfide films depends only on the initially deposited amount of copper and can be easily tuned within a range of a single monolayer to several layers. Structural characterization using in situ STM reveals commensurate c(2 × 2) structure for an only one monolayer thick copper sulfide film, which remains stable over a wide potential range. In addition, these films could also be stabilized in a bisulfide free solution resulting in an even higher stability against anodic potentials. Preparing thicker copper sulfide films yields a mixed phase regime consisting of a bulk-like copper sulfide phase with a granular appearance and a metastable bilayer phase which can be completely converted into the bulky phase by initial oxidation.