Regensburg 2010 – scientific programme
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O: Fachverband Oberflächenphysik
O 26: Oxides and insulators: Clean surfaces
O 26.9: Talk
Tuesday, March 23, 2010, 12:30–12:45, H40
Surface termination of NdGaO3(110) and DyScO3(110) — •Jens Lienemann1, Marco Busch1, Rasuole Dirsyte2, Jutta Scharzkopf2, Günter Wagner2, Helmut Winter1, and Roberto Fornari2 — 1Department of Physics, Humboldt University, Newtonstraße 15, D-12489 Berlin, Germany — 2Leibniz Institute for Crystal Growth, Max Born Straße 2, D-12489 Berlin, Germany
Auger electron spectroscopy using excitation via grazing impact of protons was applied to determine the elemental composition of the topmost layer of NdGaO3(110) and DyScO3(110) substrates. The preparation conditions of vicinal NdGaO3 and DyScO3 substrates were optimized with respect to annealing temperature, time, and gas atmosphere. Well prepared surfaces show regularly arranged, smooth terraces with single-layer steps as observed by atomic force microscopy. The surfaces of NdGaO3(110) were always NdO terminated with a small amount of Ga (2-4%) atoms at the surface [1]. A Ga and O depletion layer with a thickness of about 4 nm was detected at optimized preparation conditions. DyScO3(110) substrates show a dependence of the termination on the annealing gas. A ScO2 terminated surface was prepared with annealing in argon while an DyO-Termination was found after annealing in oxygen. A depletion layer of Dy and O was also detected.
[1] R. Dirsyte, J. Schwarzkopf, G. Wagner, J. Lienemann, M. Busch, H. Winter and R. Fornari, Appl. Surf. Sci. 255, 8685 (2009)