Regensburg 2010 – scientific programme

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.10: Poster

Tuesday, March 23, 2010, 18:30–21:00, Poster B1

Investigations of PTCDA-growth on passivated silicon surfaces with SPA-LEED — •André Kubelka, Christian Schulz, and Jens Falta — Institute for Solid State Physics, University of Bremen, 28359 Bremen

Research and utilization of organic semiconductor materials have raised increasing interest in the last years. The organic molecule 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) is often used as an model system for the investigation of physical and chemical properties of organic thin films. PTCDA is a promising candidate for epitaxial layer growth due to its flat molecular structure. We investigated the growth of PTCDA on passivated silicon surfaces with spot profile analysis low energy electron diffraction (SPA-LEED).

After deposition by molecular beam epitaxy on the H-passivated Si(111) the SPA-LEED images showed ring-like patterns with one visible diffuse ring, which indicates the growth of small or weakly-ordered islands with no preferential orientation with respect to the substrate. Further investigations using other experimental methods are in progress.