Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.114: Poster

Dienstag, 23. März 2010, 18:30–21:00, Poster B1

Automated preparation of high-quality epitaxial graphene on 6H-SiC(0001) — •Markus Ostler, Florian Speck, Markus Gick, and Thomas Seyller — Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Germany

Thermal decomposition of silicon carbide is a viable route for preparing graphene films. In contrast to other methods it has the potential for upscaling graphene synthesis to a wafer scale and the advantage of providing an insulating substrate at the same time. In particular, graphenization of SiC(0001) surfaces in Ar atmosphere has been shown to yield graphene films superior to UHV-grown epitaxial graphene. In this contribution we present details on a recently installed hot-wall reactor for graphene growth on SiC in Ar. Both preparation steps, i.e. the preconditioning of the SiC substrate by hydrogen etching and the graphene growth are performed in this setup in a fully automated manner thus ensuring the preparation of high-quality graphene on an everyday basis. Samples prepared in the new setup were characterized by atomic force microscopy (AFM) and x-ray induced photoelectron spectroscopy (XPS). We present results on the optimization of the hydrogen etching procedure by varying gas flow and temperature. The thickness distribution of graphene samples grown in the automated process is Gaussian with a mean value of 1.1 monolayers and a standard deviation of 0.15 monolayers. This indicates a highly controlled process.