Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)
O 41.116: Poster
Dienstag, 23. März 2010, 18:30–21:00, Poster B1
Preparation and characterization study of graphene on SiC(0001) — •Thomas Druga, Martin Wenderoth, and Rainer G. Ulbrich — IV. Physikalisches Institut, Georg-August-Universität Göttingen
We present a preparation and characterisation study of graphene on the silicon-terminated 6H-SiC(0001) surface. The untreated crystals were electrically contacted and transferred in UHV. After annealing at base pressure of 1*10−10 mbar at 500∘C for several hours the samples were graphitized between 1250 and 1300∘C by direct current heating. The temperature during preparation was controlled by an optical pyrometer. The surfaces were investigated by low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) at room temperature. The graphitized surfaces show different step heights resulting from coexisting mono- and bilayer graphene films. Atomically resolved topographies show the typically honeycomb structure of the graphene layer and the 6×6 periodicity resulting from the underlying buffer layer. Lateral resolved scanning tunnelling spectroscopy data indicate finite conductivity around zero bias and lateral variations in the local density of states. This work was supported by the DFG as part of SFB 602 Tp A7.