Regensburg 2010 – scientific programme
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O: Fachverband Oberflächenphysik
O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)
O 41.119: Poster
Tuesday, March 23, 2010, 18:30–21:00, Poster B1
Electronic structure of graphene on SiC produced via low-T synthesis — •Martin Weser, Carsten Enderlein, Karsten Horn, and Yuriy Dedkov — Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany
The graphitization of the SiC(0001)-surface, by annealing at temperatures above 1150∘ C under UHV conditions, has been known since a long time and became one of the dominating methods for graphene fabrication in the field of experimental physics in the last ten years. Here the LEED, core-level PES, and ARPES-results of a graphene layer produced by nickel diffusion on SiC are presented. The band maps show clear graphene π-bands with an unusual band splitting at the border of the Brillouin zone that is, up to our knowledge, not comparable to any graphene-based system known so far. This band splitting, as well as a number of unusual features in the spectral function, are ascribed to the formation of a Ni2Si-interlayer that locally breaks the symmetry of the two sublatices, by hybridization of only one of them, which leads to an electronically separated second sublattice.