Regensburg 2010 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)

O 41.1: Poster

Dienstag, 23. März 2010, 18:30–21:00, Poster B1

SPM characterization of GaN formed by ion-beam assisted epitaxy — •Lena Neumann, Jürgen W. Gerlach, Moharram Abd El Khair, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstrasse 15, 04318 Leipzig

Gallium nitride (GaN) films were formed using the ion-beam assisted epitaxy technique. The influence of the nitrogen ion-to-gallium atom flux ratio (I/A ratio) on the early stages of GaN thin films nucleation and growth on super-polished 6H-SiC(0001) substrates is studied, here. The deposition process was performed by evaporation of gallium using a conventional effusion cell and irradiation with hyperthermal nitrogen ions from a constricted glow-discharge ion source at a constant substrate temperature of 630°C. The nitrogen ions flow was kept constant and their kinetic energy did not exceed 25 eV. The selection of different I/A flux ratios was done by varying the gallium effusion cell temperature in the range between 950°C and 1020°C. For comparison, a constant amount of deposited GaN was achieved by adapting the deposition time. The surface structure during the GaN growth was monitored in situ by reflection high-energy electron diffraction (RHEED). The nucleation and subsequent film formation were observed using a scanning probe microscope (SPM) attached to the deposition system. The results show that the initial stages of the ion-beam assisted GaN formation are strongly influenced by the I/A ratio.