Regensburg 2010 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)
O 41.3: Poster
Dienstag, 23. März 2010, 18:30–21:00, Poster B1
Surface analysis for the characterization of thin heteroepitaxial GaP films on Si(100) — •Henning Döscher1, Peter Kleinschmidt1, Anja Dobrich1, Sebastian Brückner1, Oliver Supplie1, Christian Höhn1, Ulrike Bloeck1, Benjamin Borkenhagen2, Gerhard Lilienkamp2, Winfried Daum2, and Thomas Hannappel1 — 1Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin — 2IEPT, TU Clausthal, Leibnizstr. 4, 38678 Clausthal-Zellerfeld
The combination of superior III-V semiconductors with Si(100) substrates via metal-organic vapour phase epitaxy (MOVPE) is a technological and scientific challenge. The growth of nearly lattice-matched GaP on Si(100) represents an important model system for the specific defect mechanisms induced by polar on non-polar epitaxy such as anti-phase disorder. Applying a contamination free transfer system between the MOVPE and ultra high vacuum (UHV), we are able to correlate UHV based surface characterization with in situ optical measurements and post-growth ex situ analysis.
The applied instruments include X-ray photoelectron spectroscopy (XPS) for chemical analysis, X-ray diffraction (XRD) and transmission electron microscopy (TEM) for film characterization, scanning tunnelling (STM) and atomic force (AFM) microscopy for surface investigations, low energy electron diffraction (LEED) and reflectance anisotropy spectroscopy (RAS) for averaged information about the anti-phase domain distribution as well as low energy electron microscopy (LEEM) and dark field TEM for its lateral resolution.