Regensburg 2010 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)
O 41.4: Poster
Dienstag, 23. März 2010, 18:30–21:00, Poster B1
MOVPE growth processes monitored simultaneously by in-situ scanning tunneling microscope and spectroscopic ellipsometry — •Matthias Schmies, Raimund Kremzow, Markus Pristovsek, and Michael Kneissl — TU Berlin, Institut für Feskörperphysik, EW 6-1, Hardenbergstr. 36, D-10623 Berlin, Germany
Optoelectronic devices, such as single-photon emitters and semiconductor lasers, demand an excellent understanding of the growth processes during metal organic vapor phase epitaxy (MOVPE). Typical MOVPE growth conditions, e.g. 100 mbar reactor pressure and 700∘C temperatures, require optical techniques for in-situ control. However, these techniques do not provide sufficient information about surface topology. Especially monitoring the changes in the InGaAs quantum dot (QD) morphology during MOVPE is very challenging. In order to obtain information about the structural changes during MOVPE, we have built a special in-situ scanning tunneling microscope (STM). In order to also measure layer thickness and composition we combined this STM with an in-situ ellipsometer and present measurements on QD formation during MOVPE containing simultaneous information of topography and layer properties. This allows us to investigate the QD shape depending on layer thickness and composition.