Regensburg 2010 – scientific programme
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O: Fachverband Oberflächenphysik
O 41: Poster Session I (Semiconductor Substrates: Epitaxy and growth; Semiconductor Substrates: Adsorbtion; Semiconductor Substrates: Solid-liquid interfaces; Semiconductor Substrates: Clean surfaces; Oxides and insulators: Epitaxy and growth; Oxides and insulators: Adsorption; Oxides and insulators: Clean surfaces; Organic, polymeric and biomolecular films - also with adsorbates; Organic electronics and photovoltaics, Surface chemical reactions; Heterogeneous catalysis; Phase transitions; Particles and clusters; Surface dynamics; Surface or interface magnetism; Electron and spin dynamics; Spin-Orbit Interaction at Surfaces; Electronic structure; Nanotribology; Solid/liquid interfaces; Graphene; Others)
O 41.55: Poster
Tuesday, March 23, 2010, 18:30–21:00, Poster B1
Femtosecond EUV photoelectron spectroscopy of phase transitions — •Hatem Dachraoui1, Christian Oberer1, Günter Obermeier2, Martin Michelswirth1, Siegfried R. Horn2, and Ulrich Heinzmann1 — 1Molecular and Surface Physics, Bielefeld University — 2Experimental Physics II, Universität Augsburg
The thermo-induced insulator-metal phase transition in Vanadium dioxide (VO2) was investigated by use of a combination of a femtosecond EUV light source with time-of-flight (TOF) analysis of the emitted photoelectrons. The observed spectra give evidence of the changes in the electronic structure depending on temperature. Based on an analysis of the V3p- core level shift we get access to structural deviation of the VO2 and the changes of the density of states near the Fermi level responsible for the phase transition. The shift we obtained manifests this transition with its characteristic hysteresis.